Charge manipulation and imaging of the Mn acceptor state in GaAs by Cross-sectional Scanning Tunneling Microscopy

Abstract

An individual Mn acceptor in GaAs is mapped by Cross-sectional Scanning Tunneling Microscopy (X-STM) at room temperature and a strongly anisotropic shape of the acceptor state is observed. An acceptor state manifests itself as a cross-like feature which we attribute to a valence hole weakly bound to the Mn ion forming the (Mn$^{2+}3d^5+hole$) complex. We propose that the observed anisotropy of the Mn acceptor wave-function is due to the d-wave present in the acceptor ground state.Comment: Proceedings of the SIMD-4 conference. Hawaii, USA (December 1-5, 2003