We present a study of the dielectric function of metallic (III,Mn)V diluted
magnetic semiconductors in the infrared regime. Our theoretical approach is
based on the kinetic exchange model for carrier induced (III,Mn)V
ferromagnetism. The dielectric function is calculated within the random phase
approximation and, within this metallic regime, we treat disorder effects
perturbatively and thermal effects within the mean field approximation. We also
discuss the implications of this calculations on carrier concentration
measurements from the optical f-sum rule and the analysis of plasmon-phonon
coupled modes in Raman spectra.Comment: 6 pages, 6 figures include