The conductance and tunnel magneto-resistance (TMR) of the double barrier
magnetic tunnel junction with spin-valve sandwich (F/P/F) inserted between two
insulating barrier, are theoretically investigated. It is shown, that resonant
tunnelling, due to the quantum well states of the electron confined between two
barriers, sharply depends on the mutual orientation of the magnetizations of
ferromagnetic layers F. The calculated optimistic value of TMR exceeds 2000% .Comment: 3 pages, 4 figure