A scanning force microscope with a base temperature below 300 mK is used for
measuring the local electron density of a two-dimensional electron gas embedded
in an Ga[Al]As heterostructure. At different separations between AFM tip and
sample, a dc-voltage is applied between the tip and the electron gas while
simultaneously recording the frequency shift of the oscillating tip. Using a
plate capacitor model the local electron density can be extracted from the
data. The result coincides within 10% with the data obtained from transport
measurements.Comment: 3 pages, 3 figure