The csv files, "Fig. 5 profile" and "Fig. 6 profile", contain all the data points used to construct Fig. 5(d) and Fig. 6(d) of the publication, respectively.
In "Fig. 5 profile", the first two columns represents the distance and the intensity, respectively, along a line scan taken on a HAADF STEM image of a quantum well grown in a zincblende LED structure. Column 3,4 and 5 represents the distance, the scaled intensity of Ga signal, the scaled intensity of In signal, respectively, along a line scan taken on a EDS map of the same region with the HAADF STEM image.
In "Fig. 6 profile", the first two columns represents the distance and the intensity, respectively, along a line scan taken on a HAADF STEM image of a electron blocking layer grown in a zincblende LED structure. Column 3,4 and 5 represents the distance, the scaled intensity of Ga signal, the scaled intensity of Al signal, respectively, along a line scan taken on a EDS map of the same region with the HAADF STEM image.
"Table 1 data" contains all the data used to for the statistic published in Table 1. From row 3 to 12, there are 10 regions examined, respectively, in the quantum wells and the electron blocking layer. For both, the data are presented in three kinds, which are the group III molar fraction of In (or Al) at stacking fault, the group III molar fraction of In (or Al) at the matrix next to the stacking fault, and the ratio between them.We would like to acknowledge funding from BEIS Energy Entrepreneurs fund 6 for their support of Kubos Semiconductors Ltd. We also acknowledge the support of EPSRC through Grant Nos. EP/M010589/1 and EP/R01146X/1. D.J.W. would like to thank the support of EPSRC through Grant No. EP/N01202X/1
