Oscillations of the resistance observed under electromagnetic wave excitation
in the high mobility GaAs/AlGaAs 2DES are examined as a function of the
radiation frequency and the power, utilizing an empirical lineshape based on
exponentially damped sinusoids. The fit-analysis indicates the resistance
oscillation frequency, F, increases with the radiation frequency, n, at the
rate dF/dn = 2.37 mTesla/GHz; the damping parameter, a, is approximately
independent of n at constant power; and the amplitude, A, of the oscillations
grows slowly with the incident power, at a constant temperature and frequency.
The lineshape appears to provide a good description of the data.Comment: presented at the 26th International Conference on the Physics of
Semiconductors, Edinburgh, Scotland, 29 July - 2 August 200
