Binding energies of hydrogen-like impurities in a semiconductor in intense terahertz laser fields

Abstract

A detailed theoretical study is presented for the influence of linearly polarised intense terahertz (THz) laser radiation on energy states of hydrogen-like impurities in semiconductors. The dependence of the binding energy for 1s and 2p states on intensity and frequency of the THz radiation has been examined.Comment: 14 pages, 4 figure