A high entropy dopant approach has been used to prepare a new BIMEVOX ceramic system, Bi2V1-x(Mg0.25Cu0.25Ni0.25Zn0.25)xO5.5-3x/2. Structures were investigated using a combination of X-ray and neutron powder diffraction, with electrical characterisation by A.C. impedance spectroscopy. A γ-type phase is observed at room temperature over the compositional range 0.10 ≤ x ≤ 0.30, the upper limit of which is beyond that seen for all the single substituted systems based on these substituents, apart from BIMGVOX. No stabilisation of the fully disordered γ-phase is seen at room temperature over this compositional range, with only the incommensurately ordered γ'-phase evident below around 450 °C. Changes in defect structure are used to explain an apparent transition in the compositional variation of lattice parameters. The HE dopant approach has no detrimental effect on ionic conductivity, with values comparable to those of the single substituted systems based on the component oxides
