This paper describes an available graphene process with respect to material properties and also the work in progress to complete the graphene process back-end implementation to be MMIC-compatible. This process extension is critical to enable fully integrated circuits and systems based on graphene transistors. A stable process back-end is proposed, characterized and tested on both silicon and quartz substrates. Based on this, a process cross-section is now available for EM simulations. A prototype chip of RF passive devices including spiral inductors, MIM capacitors and thin film resistors, TFRs, is fabricated and measured on both substrates. On-wafer measurements of the fabricated passive devices up to 30 GHz show good agreement with EM simulation results
