Abstract

The temperature TT and magnetic field HH dependence of the resistivity ρ\rho has been measured for La0.8y_{0.8-y}Sr0.2_{0.2}MnO3_{3} (y=0 and 0.128) films grown on (100) SrTiO3_{3} substrates. The low-temperature ρ\rho in the ferromagnetic metallic region follows well ρ(H,T)=ρ0(H)+A(H)ωs/sinh(ωs/2kBT)+B(H)T7/2\rho (H,T)=\rho _{0}(H)+A(H)\omega_{s}/\sinh (\hbar \omega_{s}/2k_{B}T)+B(H)T^{7/2} with ρ0\rho _{0} being the residual resistivity. We attribute the second and third term to small-polaron and spin-wave scattering, respectively. Our analysis based on these scattering mechanisms also gives the observed difference between the metal-insulator transition temperatures of the films studied. Transport measurements in applied magnetic field further indicate that spin-wave scattering is a key transport mechanism at low temperatures.Comment: 5 pages, 4 figures. to appear in Phys. Rev.

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    Last time updated on 01/04/2019