The temperature T and magnetic field H dependence of the resistivity
ρ has been measured for La0.8−ySr0.2MnO3 (y=0 and 0.128)
films grown on (100) SrTiO3 substrates. The low-temperature ρ in the
ferromagnetic metallic region follows well ρ(H,T)=ρ0(H)+A(H)ωs/sinh(ℏωs/2kBT)+B(H)T7/2 with ρ0 being the residual resistivity. We attribute the second and third term to
small-polaron and spin-wave scattering, respectively. Our analysis based on
these scattering mechanisms also gives the observed difference between the
metal-insulator transition temperatures of the films studied. Transport
measurements in applied magnetic field further indicate that spin-wave
scattering is a key transport mechanism at low temperatures.Comment: 5 pages, 4 figures. to appear in Phys. Rev.