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SOI membrane-based pressure sensor in stress sensitive differential amplifier configuration
Authors
,
SZ Ali
+9 more
V Avramescu
C Bostan
M Brezeanu
O Buiu
S Costea
V Dumitru
I Georgescu
M Gologanu
F Udrea
Publication date
1 December 2012
Publisher
Abstract
This paper introduces a pressure sensing structure configured as a stress sensitive differential amplifier (SSDA), built on a Silicon-on-Insulator (SOI) membrane. Theoretical calculation show the significant increase in sensitivity which is expected from the pressure sensors in SSDA configuration compared to the traditional Wheatstone bridge circuit. Preliminary experimental measurements, performed on individual transistors placed on the membrane, exhibit state-the-art sensitivity values (1.45mV/mbar). © 2012 IEEE
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CUED - Cambridge University Engineering Department
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Last time updated on 15/07/2020