A novel device structure that combines field emission and field effect transistor (FET) on a laterally grown individual semiconducting singlewalled carbon nanotube (SWNT) is proposed and realized. The SWNT serves as both the channel of the FET and the field emitter. The emission current is restricted to the supply current from the FET and hence subject to the gate modulation. The bias conditions on either device are self-adaptive to satisfy current continuity. The measurement results demonstrate good emission current stability and effective gate control over the emission characteristics. This novel type of device could establish a new approach to develop miniaturized field emission devices with superior characteristics for chip-level integration
