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Solvent vapor annealing of an insoluble molecular semiconductor
Authors
,
A Amassian
+4 more
R Li
GG Malliaras
VA Pozdin
DM Smilgies
Publication date
23 March 2010
Publisher
Abstract
Solvent vapor annealing has been proposed as a low-cost, highly versatile, and room-temperature alternative to thermal annealing of organic semiconductors and devices. In this article, we investigate the solvent vapor annealing process of a model insoluble molecular semiconductor thin film - pentacene on SiO 2 exposed to acetone vapor - using a combination of optical reflectance and two-dimensional grazing incidence X-ray diffraction measurements performed in situ, during processing. These measurements provide valuable and new insight into the solvent vapor annealing process; they demonstrate that solvent molecules interact mainly with the surface of the film to induce a solid-solid transition without noticeable swelling, dissolving or melting of the molecular material. © 2010 The Royal Society of Chemistry
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CUED - Cambridge University Engineering Department
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Last time updated on 15/07/2020