Institute of Electrical and Electronics Engineers (IEEE)
Doi
Abstract
This is the author accepted manuscript. The final version is available from IEEE via the DOI in this record.One of the emerging candidates to bridge the gap between fast but volatile DRAM and non-volatile but slow storage devices is tetrahedral amorphous carbon (ta-C) based memory [1]-[3]. This offers a very good scalability, data retention and sub-5ns switching [2], [3]. Amorphous carbon memory devices can be electrically and optically switched from a high resistance state (HRS) to a low resistance state (LRS) [4]. The electrical conduction in the LRS is thought to be through sp2 clusters that form a conductive filament [4].This work was funded by the EU research & innovation project CareRAMM, no. 30998
