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Stabilizing a graphene platform toward discrete components
Authors
,
,
+17 more
O Bezencenet
A Centeno
CS Cojocaru
B Dlubak
R Galceran
S Hofmann
P Legagneux
MB Martin
JP Mazellier
A Montanaro
S Mzali
M Piquemal-Banci
J Robertson
P Seneor
B Servet
S Xavier
A Zurutuza
Publication date
9 December 2016
Publisher
Applied Physics Letters
Doi
Cite
Abstract
© 2016 Author(s).We report on statistical analysis and consistency of electrical performances of devices based on a large scale passivated graphene platform. More than 500 graphene field effect transistors (GFETs) based on graphene grown by chemical vapor deposition and transferred on 4 in. SiO2/Si substrates were fabricated and tested. We characterized the potential of a two-step encapsulation process including an Al2O3 protection layer to avoid graphene contamination during the lithographic process followed by a final Al2O3 passivation layer subsequent to the GFET fabrication. Devices were investigated for occurrence and reproducibility of conductance minimum related to the Dirac point. While no conductance minimum was observed in unpassivated devices, 75% of the passivated transistors exhibited a clear conductance minimum and low hysteresis. The maximum of the device number distribution corresponds to a residual doping below 5 × 1011 cm−2 (0.023 V/nm). This yield shows that GFETs integrating low-doped graphene and exhibiting small hysteresis in the transfer characteristics can be envisaged for discrete components, with even further potential for low power driven electronics.This study was partly funded by the European Union through the projects Grafol (No. 285275) and Graphene Flagship (No. 604391 and Core1 No. 696656)
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info:doi/10.1063%2F1.4972847
Last time updated on 21/04/2021