CORE
🇺🇦
make metadata, not war
Services
Services overview
Explore all CORE services
Access to raw data
API
Dataset
FastSync
Content discovery
Recommender
Discovery
OAI identifiers
OAI Resolver
Managing content
Dashboard
Bespoke contracts
Consultancy services
Support us
Support us
Membership
Sponsorship
Community governance
Advisory Board
Board of supporters
Research network
About
About us
Our mission
Team
Blog
FAQs
Contact us
High fill factor a-Si:H sensor arrays with reduced pixel crosstalk
Authors
,
JH Chang
+7 more
G Heiler
J Lai
A Nathan
A Sazonov
D Striakhilev
T Tredwell
Y Vygranenko
Publication date
1 January 2008
Publisher
Abstract
In this paper, we report on low noise, high fill factor amorphous silicon (a-Si:H) image sensor structures for indirect radiography. Two types of the sensor arrays comprising n-i-p photodiodes and m-i-s photosensors have been fabricated. The device prototypes contain 100 x 100 pixels, with a pixel pitch of 139 μm. The active-matrix addressing is provided by low off-current TFTs. The sensors are vertically integrated onto the TFT-backplane, by implementing a 3-μm-thick low-k interlayer dielectric. This dielectric layer serves to reduce the data line capacitance and to planarize underlying topography. The detector was designed for reduced data-line resistance and parasitic coupling. Details of the device design and fabrication, along with sensor performance characteristics, are presented and discussed. © 2008 Materials Research Society
Similar works
Full text
Available Versions
CUED - Cambridge University Engineering Department
See this paper in CORE
Go to the repository landing page
Download from data provider
oai:generic.eprints.org:653942...
Last time updated on 15/07/2020