Short channel vertical transistors with excellent saturation characteristics

Abstract

The use of a vertical thin film transistor (VTFT) topology in the flat panel active matrix array, opens up a plethora of new high performance applications. The VTFT is small in footprint by virtue of its stacked layer configuration, in which channel lengths can be conveniently scaled down to nanometer regime without having to resort to photolithography as would otherwise be needed when scaling lateral TFTs. More importantly, the VTFT is also fully compatible to the materials and processes used in flat panel technology, takes making it amenable to large area scaling. © 2009 IEEE