This paper presents the performance of a silicon-on-insulator (SOI) p+/p-well/n+ diode temperature sensor, which can operate in an extremely wide temperature range of 80 K to 1050 K. The thermodiode is placed underneath a tungsten micro-heater which is embedded in a thin dielectric membrane, obtained with a post-CMOS deep reactive ion etching process. Analytical and numerical models are used to support experimental findings. Non-linearity, sensitivity and methods for their reduction and enhancement, respectively, are investigated in detail
