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Simulation of polarity independent RESET in electrochemical metallization memory cells
Authors
,
N Adler
+5 more
S Menzel
S Tappertzhofen
I Valov
J Van Den Hurk
R Waser
Publication date
16 September 2013
Publisher
Abstract
Redox-based resistive switching devices are a potential candidate for future non-volatile memory. One type of these devices is the electrochemical metallization cell (ECM), which typically exhibit a bipolar operation scheme. However, at high current levels a transition to polarity independent RESET switching has been observed. This work presents a numerical simulation model of the RESET operation in ECM cells, which is capable of explaining the occurrence of polarity-independent RESET switching. The model is based on the thermally activated electrochemical dissolution of a conducting filament. © 2013 IEEE
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Last time updated on 15/07/2020