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A discretized proportional base driver for silicon carbide bipolar junction transistors
Authors
,
HP Nee
+4 more
PR Palmer
D Peftitsis
J Rabkowski
G Tolstoy
Publication date
16 September 2013
Publisher
Abstract
Silicon carbide (SiC) bipolar junction transistors (BJTs) require a continuous base current in the on-state. This base current is usually made constant and is corresponding to the maximum collector current and maximum junction temperature that is foreseen in a certain application. In this paper, a discretized proportional base driver is proposed which will reduce, for the right application, the steady-state power consumption of the base driver. The operation of the proposed base driver has been verified experimentally, driving a 1200-V/40-A SiC BJT in a dc-dc boost converter. In order to determine the potential reduction of the power consumption of the base driver, a case with a dc-dc converter in an ideal electric vehicle driving the new European drive cycle has been investigated. It is found that the steady-state power consumption of the base driver can be reduced by approximately 60%. The total reduction of the driver consumption is 3459 J during the drive cycle, which is slightly more than the total on-state losses for the SiC BJTs used in the converter. © 2013 IEEE
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CUED - Cambridge University Engineering Department
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oai:generic.eprints.org:623402...
Last time updated on 15/07/2020
CUED - Cambridge University Engineering Department
See this paper in CORE
Go to the repository landing page
Download from data provider
oai:generic.eprints.org:596620...
Last time updated on 15/07/2020