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Impact of high-k dielectrics on breakdown performances of SiC and diamond Schottky diodes
Authors
,
,
+6 more
GAJ Amaratunga
C Boianceanu
G Brezeanu
M Brezeanu
P Godignon
F Udrea
Publication date
1 January 2009
Publisher
Abstract
This paper presents a comparison between SiC and diamond Schottky barrier diodes using the oxide ramp termination. The influences of the dielectric thickness and relative permittivity on the diode's electrical performance are investigated. Typical commercial drift layer parameters are used for this study. The extension of the space charge area throughout the drift region and the current distribution at breakdown are shown. The efficiency of the termination is also evaluated for both SiC and diamond diodes. © (2009) Trans Tech Publications, Switzerland
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CUED - Cambridge University Engineering Department
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oai:generic.eprints.org:341714...
Last time updated on 15/07/2020
CUED - Cambridge University Engineering Department
See this paper in CORE
Go to the repository landing page
Download from data provider
oai:generic.eprints.org:747423...
Last time updated on 15/07/2020