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Physical Modelling of Large Area 4H-SiC PiN Diodes
Authors
,
P Brosselard
+12 more
AT Bryant
P Godignon
JL Hudgins
IEEE,
MR Jennings
X Jorda
PA Mawby
J Milian
PR Palmer
N-A Parker-Allotey
A Perez-Tomas
E Santi
Publication date
1 January 2009
Publisher
Abstract
The recent developments in SiC PiN diode research mean that physics-based models that allow accurate, rapid prediction of switching and conduction performance and resulting converter losses will soon be required. This is especially the case given the potential for very high voltage converters to be used for enabling distributed and renewable power generation. In this work an electro-thermal compact model of a 4.5 kV silicon carbide PiN diode has been developed for converter loss modelling in Simulink. Good matching of reverse recovery has been achieved between 25 and 200 °C. The I-V characteristics of the P+ anode contact have been shown to be significant in obtaining good matching for the forward characteristics of the diode, requiring further modelling work in this area. © 2009 IEEE
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CUED - Cambridge University Engineering Department
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oai:generic.eprints.org:883863...
Last time updated on 15/07/2020
CUED - Cambridge University Engineering Department
See this paper in CORE
Go to the repository landing page
Download from data provider
oai:generic.eprints.org:345720...
Last time updated on 15/07/2020