Abstract

We analyze two scattering mechanisms that might cause intrinsic electronic resistivity in multi-wall carbon nanotubes: scattering by dopant impurities, and scattering by inter-tube electron-electron interaction. We find that for typically doped multi-wall tubes backward scattering at dopants is by far the dominating effect.Comment: 6 pages, 2 figures, to appear in Phys. Rev.

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    Last time updated on 01/04/2019