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A 60-nm-thick enhancement mode In0.65Ga0.35As/InAs/ In0.65Ga0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications,
Authors
Edward Yi Chang
Heng-Tung Hsu
YASUYUKI MIYAMOTO
恭幸 宮本
Publication date
16 September 2016
Publisher
Abstract
Abstract is not available.
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oai:irdb.nii.ac.jp:00897:00040...
Last time updated on 06/09/2020