This paper develops a quantitatively accurate first-principles description
for the frequency and the linewidth of collective electronic excitations in
inhomogeneous weakly disordered systems. A finite linewidth in general has
intrinsic and extrinsic sources. At low temperatures and outside the region
where electron-phonon interaction occurs, the only intrinsic damping mechanism
is provided by electron-electron interaction. This kind of intrinsic damping
can be described within time-dependent density-functional theory (TDFT), but
one needs to go beyond the adiabatic approximation and include retardation
effects. It was shown previously that a density-functional response theory that
is local in space but nonlocal in time has to be constructed in terms of the
currents, rather than the density. This theory will be reviewed in the first
part of this paper. For quantitatively accurate linewidths, extrinsic
dissipation mechanisms, such as impurities or disorder, have to be included. In
the second part of this paper, we discuss how extrinsic dissipation can be
described within the memory function formalism. We first review this formalism
for homogeneous systems, and then present a synthesis of TDFT with the memory
function formalism for inhomogeneous systems, to account simultaneously for
intrinsic and extrinsic damping of collective excitations. As example, we
calculate frequencies and linewidths of intersubband plasmons in a 40 nm wide
GaAs/AlGaAs quantum well.Comment: 20 pages, 3 figure