In this paper we investigate the electrostatics and charge transport in a triplegate
Silicon Nanowire transistor. The quantum confinement in the transversal dimension
of the wire have been tackled using the Schr¨odinger equation in the Effective Mass Approximation
coupled to the Poisson equation. This system have been solved efficiently
using a Variational Method. The charge transport along the longitudinal dimension of the
wire has been considered using the semiclassical approximation, in the ballistic regime
