自支撑硅氧碳纳米镶嵌复合薄膜具有细小等轴beta-SiC纳米晶弥散分布在非晶态相SiO_xC_y和游离碳基体的复合结构。利用电子顺磁共振谱(EP; R)仪对900~1; 200℃终烧薄膜复合结构中的氧空位形成进行分析;采用丝网印刷法在薄膜表面获得两条平行高温银浆电路层,并以其为散热基板进行LED器件板上芯片封装(; COB)。通过扫描电镜(SEM)与光学显微镜对薄膜微观形貌及封装结构进行观察,并通过LED热光参数测试仪对其结温进行探究。结果表明,终烧温度升高; ,薄膜氧空位浓度增大,g因子接近自由电子值2.0023。高温银浆导电层均匀致密保证良好电导效果。1; 200℃终烧薄膜作为散热基板具有较好热传导与绝缘特性,其封装LED结温约为33.7℃,低于120℃限制,有望规模应用于大功率LED器件领域。Main phases of freestandingbeta-SiC/SiO_xC_y/Cfreenanocomposite films; are SiO_xC_y,and beta-SiC nano-crystals are embedded within amorphous; SiO_xC_y and free carbon clusters.Formation of oxygen vacancy in the; samples sintered at 900-1 200 ℃ was investigated by electron; paramagnetic resonance(EPR)spectroscopy.The films can be silk-screened; by high temperature silver paste electrode with good conductivity and; used as heat dissipation substrate for high-power LED devices via the; technology of Chip On Board(COB).Morphology and package structure; analysis were characterized by scanning electron microscope(SEM)and; optical microscope. Junction temperature of LED devices was measured by; thermal transient tester.The results show that the proportion of oxygen; vacancy increases with increasing pyrolysis temperatures,and resonance; lines with g-factor close to the free-electron value(2.0023)is; attributed to an unpaired electron trapped on an oxygen vacancy site.; Junction temperature of LED devices based on the sample substrate; sintered at 1 200℃ with high heat transfer capability and good; insulation is 33.7℃far below the limit of 120℃.The obtained results are; expected to have applications in high-power LED devices.国家自然科学基金资助项目; 福建省高校产学合作资助项目; 深圳市知识创新计划资助项目; 厦门大学大学生创新创业训练计划资助项
