Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
Abstract
A stepwise character of cadmium telluride melting is shown by using differential thermal
analysis and conductivity measurements in the 1323 to 1473 K temperature range. According to the
results of differential thermal analysis the parameters of CdTe melting are determined by the premelting
processes that are related to defect production in crystal lattice. The crystallization processes are
controlled with the melt state (structure) that depends on its maximum temperature
