Caudano, Yves

Chabal, Yves

Chaban, Ed

Christman, Stan

Jacobson, D.

Raghavachari, Krishnan

Stefanov, Boris

Weldon, Markus

Infrared absorption spectroscopy is used to study the exfoliation process in hydrogen-implanted silicon wafers by monitoring the bound hydrogen evolution. The ability to probe the low frequency vibrations, such as the bending modes of the Si-H bond, along with first-principles calculations using gradient-corrected density functional theory, makes it possible to unambiguously determine the presence of relevant defect structures such as the hydrogenated mono-vacancies VH, VH2, VH3 and VH4 and the development of internal surfaces. The formation of molecular hydrogen upon annealing is better established by using the evolution of the intensity of both the bending and the stretching modes

Repository of the University of Namur

Spectroscopic and theoretical investigations of hydrogen-induced exfoliation of silicon:Si-H bending modes

Spectroscopic and theoretical investigations of hydrogen-induced exfoliation of silicon : Si-H bending modes

Spectroscopic and theoretical investigations of hydrogen-induced exfoliation of silicon : Si-H bending modes

Abstract

Similar works

Full text

Available Versions

Repository of the University of Namur