This paper presents the effects of structural parameters like Quantum well width, barrier width, spacer
width, contact width and contact doping, on performance of Resonant Tunneling Diode using full quantum
simulation. The simulation is based on a self-consistent solution of the Poisson equation and
Schrodinger equation with open boundary conditions, within the non-equilibrium Green’s function formalism.
The effects of varying the structural parameters is investigated in terms of the output current, peak
current, valley current, peak to valley current ratio and the voltage associated with the peak current. Simulation
results illustrate that the device performance can be improved by proper selection of the structural
parameters