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单晶6H-SiC经氦离子辐照及退火后的微观组织研究
Authors
冉广
冯琦杰
+5 more
叶超
周韦
李宁
李瑞祥
沈强
Publication date
15 January 2018
Publisher
Abstract
在400℃下对单晶6H-SiC进行了400keV氦离子辐照,辐照剂量为1×1016He+/cm2,随后在1200和1500℃退火30min。采用透射电子显微镜和扫描电子显微镜对辐照态和退火态SiC进行微观结构观察与分析。结果表明,单晶6H-SiC在400℃经氦离子辐照后,仅观察到由辐照引起的位移损伤带,而未观察到明显尺寸的氦气泡。但经1200℃退火30min后,在辐照损伤区域形成了呈血小板状的气泡簇,其主要分布在(0001)晶面上,少量形成在(1120)晶面。辐照未在6H-SiC表面上形成明显尺寸的缺陷,而经1200℃退火30min后,SiC表面出现大尺寸的起泡和凹坑,进一步提高退火温度至1500℃时,表面起泡和形成凹坑更严重,并产生了大量裂纹。本研究同时对微观结构演化的机理进行了分析与讨论。中国工程物理研究院NPL,CAEP项目资助(2015AB001
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Last time updated on 10/06/2020