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预氧化法制备均匀硅纳米线阵列
Authors
李燕秋
渠亚洲
程其进
Publication date
15 October 2018
Publisher
'Herpetologists League'
Doi
Cite
Abstract
利用双氧水溶液对硅片表面进行预氧化处理,并用改良的RCA法清洗硅片,结合金属辅助化学刻蚀(MACE)制备硅纳米线阵列(Si NWs)。通过表征发现:预氧化清洗相较于传统RCA清洗,能够降低硅片表面微粗糙度,同时提高后续制备的硅纳米线阵列的均匀性。此外,在300~800 nm波段,当硅纳米线的长度相近时,经预氧化清洗制备的硅纳米线阵列反射率降低,当硅纳米线长度为500 nm左右时,反射率降低值大于2. 4%。最后分析了均匀硅纳米线阵列的形成机理。深圳市基础研究项目(JCYJ20170306141238532
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Last time updated on 10/06/2020