氮化镓(GalliumNitride，GaN)基III-V族材料禁带宽度(0.7eV-6.2eV)可以覆盖紫外、可见、红外光波段，而且具有很高的光电、电光转换效率，使得其在发光二极管(LightEmittingDiode，LED)、激光器(LaserDiode，LD)、探测器(Photodetector，PD)以及太阳能电池(SolarCell)等光电器件领域有广泛的应用。本文以GaN基LED的需求为出发点，利用金属氧化物化学气相沉积（MOCVD）系统，制备了具有不同外延结构的InGaN/GaN多量子阱（MQW）样品，并基于理论模拟分析，研究了外延结构对蓝光LED中efficiencydroo...The band gap of III-Nitride materials can be tuned continuously from 0.7 eV to 6.2 eV, which covers the range of violet, visible, and infrared light, making them the most suitable candidates for the application of optoelectronic devices such as light emitting diode (LED), laser diode (LD), photo detector (PD), and solar cell. In this research report, based on the demand for lighting, MOCVD techniq...学位：博士后院系专业：物理科学与技术学院_凝聚态物理学号：201517001
