Preparation of Europium Doped Silicon Based Oxynitride Phosphor by Polymer-Derived Method

Abstract

采用先驱体转化法制备含铕氮氧化物荧光粉。通过热分析结果确认聚碳硅烷与乙酰丙酮铕的聚合温度;通过对不同氮化温度之后样品碳含量的检测以及失重情况的分析,确认含铕聚碳硅烷的氮化温度;通过XRD结果确认最终的烧结温度。利用该方法初步制备出了铕掺杂硅基氮氧化物荧光粉,采用XRD、荧光光谱等手段分析所得荧光粉的结构与发光性能,所得的荧光粉在375 nm波长激发下,发射峰位于550 nm,基质相为α-Si_3N_4和β-Si_3N_4的混合相。Europium doped silicon based oxynitride phosphor was prepared by polymer-derived method.Thermal analysis results confirm the polymerization temperature of polycarbosilane with Eu(AcAc)3;the nitridation temperature was confirmed by the analysis of weight loss and carbon content;the final sintering temperature was confirmed by the XRD results.The Eu doped silicon based oxynitride phosphor was successfully prepared by this method.The structure and photoluminescence of this phosphor was analyzed by XRD and fluorescence spectra.The results show that the excitation peak was located at 375 nm,the emission peak was located at 550 nm,and the crystal structure was the mixture of α-Si_3N_4 and β-Si_3N_4

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