在碳化硅(SiC)陶瓷中引入异质元素可赋予其更优异的性能,如良好的热稳定性和独特的电磁性能。采用单源聚合物先驱体法制备陶瓷,通过合成不同结构的单; 源聚合物先驱体,可在原子尺度设计、调控陶瓷的组成和微结构等方面,达到优化陶瓷性能的目的。根据近年来的研究成果,介绍了单源聚合物先驱体制备Si-B; -C、Si-M-C (M=Ti, Zr, Hf)和Si-M-C (M=Fe, Ni)复相陶瓷的研究动态,并展望了其今后的发展趋势。The introduction of heterogeneous elements into SiC ceramics can endow; the ceramics with more excellent performances, such as high temperature; stability and unique electromagnetic properties. When preparing ceramics; through a single-source-precursor route, the composition and; microstructure of ceramics can be designed and tailored by tuning the; architecture of single-source-precursors at the atomic scale for; optimizing the ceramic performance. The research trends on Si-B-C,; Si-M-C (M = Ti, Zr, Hf) and Si-M-C (M=Fe, Ni) ceramic composites derived; from a single-source-precursor route were elaborated according to the; research achievements in recent years, meanwhile, its development trend; in the future was discussed.福建省自然科学基金; 华侨大学2016年实验教学改革与建设课
