提出减低 p- Si单晶表面复合速度参数值的两个行而有效的方法 ,解释了其不同的作用机理 .实验表明 ,经 HF腐蚀处理过的 p- Si单晶 ,自然晾干的表面复合速度测算值比红外灯烘干的测算值低 1个量级以上 ;而对于同一 p- Si单晶 ,置于氮气氛围之中的测算值要比大气之中的测算值低 2个量级以上The two effective measures for reducing value of the surface recombination veloc ity(SRV) on p Si sruface are proposed, and their different operational mechanis ms are also explained. It has been manifested by experiments that for p Si sing le crystal etched by solution HF∶H 2O=1∶1 and rinsed again with the deionized water, value of the SRV of this sample drie d then by airing lower than of this sample stoved then by infrared lamp for one order of magnitude and over, and value of the SRV of the sample in nitric gas environment more lower than of this sample in atmospheric environment for t wo orders of magnitude and over
