SiGe弛豫缓冲层是高性能Si基光电子与微电子器件集成的理想平台.通过1000℃干法氧化组分均匀的应变Si0.88Ge0.12层,在Si衬底上制备了表面Ge组分大于0.3,弛豫度大于95%,位错密度小于1.2×105cm-2的Ge组分渐变SiGe弛豫缓冲层.通过对不同氧化时间的样品的表征,分析了氧化过程中SiGe应变弛豫的主要机制.An ultra-low dislocation density of 1.2×105cm-2,95% strain relaxed,compositionally graded SiGe layer formed by dry oxidizing the strained Si0.88Ge0.12 alloy on Si (100) substrates at 1000℃ was prepared.By comparing samples with various oxidation times,the relaxation mechanisms of the strained SiGe layers during the oxidation processes were analyzed.国家自然科学基金(批准号:60676027,50672079,60336010);; 福建省重点科技项目(批准号:2006H0036);; 教育部回国留学人员启动基金资助项目~
