针对以蓝宝石为衬底的GaN基发光二极管出现的电流扩展不均的问题,采用有限元方法建立了GaN基发光二极管的三维网络模型,并对四种常见结构的器件进行数值模拟,发现影响二极管电流的因素不仅与发光二极管电极的位置有关,而且依赖于器件的结构参数。以电流扩展不均为指标确定出这四种器件中最佳的电极位置分布,同时对最佳电极位置分布的器件进行了结构参数优化,结果表明当p型金属层方块电阻与n型GaN的方块电阻接近时,电流扩展均匀性最好,且p-GaN的接触电阻和厚度越小,电流扩展越不均匀。A 3D networks model of GaN-based LED on sapphire substrate was built by finite element analysis to simulate the non-uniformity current spreading.Analog modeling was done on the four normal device structures,it was found that the factors effected the current of LED were the position of electrode and the parameters of device structure.Considering the practical structures of GaN-based LED,four LED designs were modeled and the optimal electrode distribution was obtained,meanwhile the structure parameters were optimized.It reveals that the smaller contact resistances and the thickness of p-GaN are,the more non-uniformity of current distribution is.国家自然科学基金(60276029);; 国家863计划(2004AA311020和2006AA032409);; 福建省科技项目和基金(2006H0092,A0210006,2005HZ1018
