建立一套基于超高真空俄歇电子能谱的原位加热系统,对GaN薄膜进行热效应研究．随着温度的增加,Ga LMM和Ga MVV的动能减小．利用第一性原理计算,获得理论的GaMVV俄歇谱.加热过程由于晶格热膨胀以及表面原子再构引起价电子态密度发生变化,从而导致价带俄歇谱负移．An in situ heating system was built for the Auger electron spectroscopy to investigate the thermal effect of Auger lines. A GaN sample was studied in this system. The kinetic energy of Ga LMM and MVV Auger lines were observed to shift negatively with temperature increasing. By using 06 initio calculation, the theoretical Ga MVV Auger line shape was fit, which well reflects the inner property of the line. The Auger shift with heating is related with the valence electron rearrangement in the thermal expansion of the local bonds
