Perturbative regime of terahertz high-harmonics generation in topological insulators

Abstract

In this Letter, terahertz high harmonic generation processes in topological insulators of the bismuth and antimony chalcogenides family are investigated. Field conversion efficiencies are determined and clean cubic and quintic power-law scaling is observed for third and fifth harmonics, up to driving terahertz fields of 140 kV/cm. This is in contrast to all previous experiments on terahertz harmonics generation in Dirac materials where a non-perturbative regime has been observed already at few 10s kV/cm driving fields. Our nonlinear THz spectroscopy experiments are complemented by THz pump - optical probe measurements showing distinctly different relaxation dynamics of the carriers in the topologically-protected Dirac states at the surfaces and the bulk. The THz-induced dynamics of surface states reveal ultrafast relaxation that prevents accumulation effects, and results in a clear perturbative regime of THz harmonics generation that is different to graphene or Dirac semimetals with their slower relaxation times in the few ps regime