研究了PECVD腔内压力、淀积温度和淀积时间等工艺条件对SiO2薄膜的结构、淀积速率和抗腐蚀性等性能的影响。结果表明,利用剥离工艺,并采用AZ5214E光刻胶作为剥离掩模成功制作了约2μm厚的包裹在金属铝柱周围的SiO2隔热掩模。The silicon oxide thin films are deposited on Silicon substrate by PECVD.The influence of the process parameters such as temperature, reactant and time on the quality,deposited rate and etchant-resistant characteristics of the silicon oxide thin films are discussed.The experimental result indicates that 2μm-thick silicon oxide adiabatic films can be prepared successfully by using lift-off technology with AZ5214E photoresist lift-off mask,which is wrapped around the aluminum pillar
