Resonant-Tunnelling Diodes (RTDs) are a specific class of Quantum Barrier Devices, which offer a lot of potential for customisation through careful engineering of their semiconductor layer structure. They exhibit characteristics that make them good candidates for use in both subharmonic mixers and signal amplifiers, that operate at millimetre and
sub-millimetre frequencies.
In this thesis RTDs fabricated at the University of Leeds from three different layer structures are investigated. Initially, device measurements are presented along with a device model for use in circuit simulation software. Planar transmission media circuits were designed for subharmonic mixers and two types of amplifiers, all using these devices. Additional circuits, implemented in waveguide technology, were also studied in preparation for realising the RTD based amplifiers at sub-millimetre and terahertz frequencies.
The sub-harmonic mixer circuits were simulated at microwave, millimetre, and sub-millimetre frequencies. Best predicted conversion loss performance is on the order of 20 dB. It was found that amongst the devices used an optimum size exists, offering best trade-off between junction capacitance and current density.
The amplifier circuits are divided into two groups, reflection based amplifiers and active transmission line. Their purpose would be to complement the mixers towards eventually building a receiver with low power requirements
and low overall conversion loss. The former were found to either exhibit high narrow-band gain, while the latter had low wide-band gain, with an additional, resonant peak at frequencies in the sub-millimetre wave region.
The project was primarily a parametric design study, rather than a build and test project. Therefore, the simulation results are used to determine what characteristics of the devices studied would make them suited for use in circuits at high frequencies; and to come up with recommendations
for future optimum RTD layer design
