Rich nonlinear behaviours have been observed in microelectromechanical and nanoelectromechanical systems (MEMS and NEMS) resonators. This dissertation has performed a systematic study of nonlinear dynamics in various MEMS and NEMS resonators that appear to be single, two coupled, arrayed, parametric driven and coupled with multiple-fields, with the aim of exploring novel applications. New study on dynamic performance of a single carbon nanotube resonator taking account of the surface induced initial stress has been performed. It is found that the initial stress causes the jumping points, the whirling and chaotic motions to appear at higher driving forces. Chaotic synchronization of two identical MEMS resonators has been theoretically achieved using Open-Plus-Closed-Loop (OPCL) method, and the coupled resonating system is designed as a mass detector that is believed to possess high resistance to noise. The idea of chaotic synchronization is then popularized into wireless sensor networks for the purpose of achieving secure communication. The arising of intrinsic localised mode has been studied in microelectromechanical resonators array that is designed intentionally for an energy harvester, which could potentially be used to achieve high/concentrated energy output. Duffing resonators with negative and positive spring constants can exhibit chaotic behaviour. Systematic calculations have been performed for these two systems driven by parametric pumps to unveil the controllability of chaos. Based on the principle of nanomechanical transistor and quantum shuttle mechanism, a high sensitive mass sensor that consists of two mechanically coupled NEMS resonators has been postulated, and the mass sensor which can be realized in large-scale has also been investigated and verified. Furthermore, an novel transistor that couples three physical fields at the same time, i.e. mechanical, optical and electrical, has been designed, and the coupled opto-electro-mechanical simulation has been performed. It is shown from the dynamic analysis that the stable working range of the transistor is much wider than that of the optical wave inside the cavity
