TEM Characterization of Solar Wind Effects on Genesis Mission Silicon Collectors

Abstract

The Genesis Discovery Mission passively allowed solar wind (SW) to implant into substrates during exposure times up to ~853 days from 2001 to 2004. The spacecraft then returned the SW to Earth for analysis. Substrates included semiconductor wafers (silicon, sapphire, and germanium), as well as a number of thin films supported by either silicon or sapphire wafers. During flight, subsets of the SW collectors were exposed to one of 4 SW regimes: bulk solar wind, coronal hole solar wind (CH, high speed), interstream solar wind (IS, low speed) or coronal mass ejections (CMEs). Each SW regime had a different composition and range of ion speeds and, during their collection, uniquely changed their host SW collector. This study focuses on bulk vs IS SW effects on CZ silicon