Nanoelectronics is an emerging field of nanotechnology where innumerable nanomaterials are used to fabricate electronic devices like LEDs, Photodiodes, Transistors, FETs, UJTs, SCRs, Laser diodes, etc. The accomplishment of high-efficiency electronic devices at low cost tends to be the foremost challenging task in the field of nanoelectronics. The p-n heterojunction is a junction of two dissimilar p and n-type crystalline materials with different bandgap energies, work functions and electron affinities.The n-ZnO/p-Si heterojunction device tends to be cost-effective and also potential candidates for integration with microelectronic based photonic and optoelectronic devices. Th electrical properties of n-ZnO/p-Si heterojunction diode can be fine-tuned by the addition of dopants at different concentrations.This article presents a brief overview on the influence of different rare earth dopants on chargecarrier enhancement and transport mechanism in n-ZnO/p-Si heterojunction diode. This review paper also presents an outline on heterojunction formation theories and applications of n-ZnO/p-Si heterojunction diod
