Experiments have been performed at the Mainz Microtron MAMI
to explore the radiation emission from a 4-period epitaxially grown strained layer Si1−xGex undulator with a period length λu = 9.9 μm. Electron energies of 270 and
855MeV have been chosen. In comparison with a flat silicon reference crystal, a broad excess yield around the theoretically expected photon energies of 0.069 and 0.637 MeV, respectively, has been observed for channeling at the undulating (110) planes. The results are discussed within the framework of the classical undulator theory
