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一种层间距可控型有机硅烷嫁接水滑石的原位共沉淀合成方法
Authors
陶奇
何宏平
朱建喜
袁鹏
Publication date
1 January 1918
Publisher
Doi
Cite
Abstract
本发明公开了一种层间距可控型有机硅烷嫁接水滑石的原位共沉淀合成方法,其主要区别于传统共沉淀法合成水滑石的方面在于:利用表面活性剂的插层作用对水滑石层间域高度进行调控;并在水滑石晶体形成的同时利用有机硅烷水解产生的Si–OH与粘土矿物表面的羟基原位缩合而有效改善矿物的表面亲和性,借此控制表面活性剂的用量,减少其脱附等潜在环境威胁以及所导致的复合材料稳定性与均一性的降低等。本发明的合成方法原料易得、操作简单易行,所得有机硅烷嫁接水滑石在粘土基纳米复合材料、有机阴离子环境污染物的修复和无卤阻燃剂等领域有重要的应用价值
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Last time updated on 27/11/2019