'Institute of Electrical and Electronics Engineers (IEEE)'
Doi
Abstract
An integrated DC/DC converter with online monitoring of the degradation induced by hot-carrier stress (HCD) in new generation power LDMOS transistors is proposed. In particular, when a relatively high drain voltage is applied during on-state regime (switching phase), degradation mechanisms lead to an increase of the transistor on-resistance (RON). To this purpose, the converter is able to dynamically estimate the RON of the power LDMOS and to provide its value to the user during normal operation. The presented solution, developed in STMicroelectronics 90nm BCD technology, features a non-invasive current sensing and voltage sampling architecture, which is applied to a common DC/DC boost converter to evaluate the resistance of the power LDMOS. Without lack of generality, this specific sensing structure can be applied to any kind of converter, e.g. buck or buck-boost, as it does not require any change in the main conversion circuit
