Arcidiacono, R

Boscardin, M

Cartiglia, N

Cenna, F

Cirio, R

Costa, M

Dalla Betta GF,

Ferrero, M

Ficorella, F

Mandurrino, M

Monaco, V

Obertino, Mm

Pancheri, L

Paternoster, G

Sacchi, R

Sola, V

Staiano, A

English

Institutional Research Information System University of Turin

15 December 2021AperTO - Archivio Istituzionale Open Access dell'Università di TorinoOriginal Citation:First production of 50 micron thick Ultra-Fast Silicon Detectors at FBKPublisher:Terms of use:Open Access(Article begins on next page)Anyone can freely access the full text of works made available as "Open Access". Works made available under aCreative Commons license can be used according to the terms and conditions of said license. Use of all other worksrequires consent of the right holder (author or publisher) if not exempted from copyright protection by the applicable law.Availability:Okinawa Institute of Science and Technology Graduate UniversityThis is the author's manuscriptThis version is available http://hdl.handle.net/2318/1731921 since 2020-02-27T17:16:32ZFirst production of 50 µm thick Ultra-Fast Silicon Detectors at FBK 	Authors:	V.	Sola,	R.	Arcidiacono,	M.	Boscardin,	N.	Cartiglia,	F.	Cenna,	V.	Cirio,	M.	Costa,		G.F.	Dalla	Betta,	F.	Ficorella,	M.	Ferrero,	M.	Mandurrino,	V.	Monaco,	M.M.	Obertino,		L.	Pancheri,	G.	Paternoster,	V.	Sacchi,	A.	Staiano		In	 this	 contribution,	we	present	new	developments	 in	 the	production	of	Ultra-Fast	Silicon	Detectors	at	the	Fondazione	Bruno	Kessler	(FBK,	Trento,	Italy).	Ultra-Fast	 Silicon	 Detectors	 (UFSD)	 are	 innovative	 silicon	 sensors	 optimised	 for	 timing	measurements	based	on	 the	Low-Gain	Avalanche	Diode	design.	UFSD	 recently	obtained	a	time	resolution	of	st	~	30	ps	in	beam	tests	and	are	now	being	considered	in	the	upgrade	of	the	CMS	and	ATLAS	experiments	as	timing	detectors.	After	 the	 successful	 production	of	 the	 first	 batch	of	 300	µm	 thick	UFSD	 in	 2016,	 FBK	has	recently	delivered	its	first	50	µm	thick	UFSD	sensors.	These	sensors	use	high	resistivity	Si-on-Si	substrates,	and	have	a	variety	of	doping	profiles	and	strategies	based	on	Boron,	Gallium,	Carbonated	Boron	and	Carbonated	Gallium	to	obtain	a	controlled	multiplication	mechanism.	Such	variety	of	gain	 layers	will	allow	 identifying	 the	most	 radiation	hard	 technology	 to	be	employed	in	the	production	of	UFSD,	to	extend	their	radiation	resistance	beyond	the	current	limit	of	F	~	1015	neq/cm2.	In	our	contribution,	we	will	show	the	timing	performances	of	this	new	FBK	production	and	we	will	 present	 results	 on	 radiation	 damage	 tolerance	 for	 the	 4	 different	 types	 of	 gain	 layer	design.	

First production of 50 micron thick Ultra-Fast Silicon Detectors at FBK

https://iris.unito.it/bitstream/2318/1731921/1/Hiroshima_Valentina_Sola.pdf

First production of 50 micron thick Ultra-Fast Silicon Detectors at FBK

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