Lamberti, Carlo

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0102030405060708091011121314151617181920212223242526272829303132333435363738394041424344454647Characterization of Semiconductor Heterostructuresand NanostructuresFont: Times & Century gothic Size:10/12pt Margins:Top:18mm Gutter:18mm T.Area:125mm 192mm 1 Color Lines: 46 Fresh RectoEls AMS CSHN Prelims 11-3-2008 20:53 Page:1 Trim: 165mm240mm Floats: Top/Bottom TS: Integra, India0102030405060708091011121314151617181920212223242526272829303132333435363738394041424344454647Font: Times & Century gothic Size:10/12pt Margins:Top:18mm Gutter:18mm T.Area:125mm 192mm 1 Color Lines: 46 Fresh RectoEls AMS CSHN Prelims 11-3-2008 20:53 Page:2 Trim: 165mm240mm Floats: Top/Bottom TS: Integra, India0102030405060708091011121314151617181920212223242526272829303132333435363738394041424344454647Characterization of SemiconductorHeterostructures andNanostructuresEdited byCarlo LambertiDepartment of Inorganic, Physical and Materials Chemistry andNIS Center of Excellence, University of Torino, and INSTMCentro Di Riferimento, Torino, ItalyAmsterdam • Boston • Heidelberg • London • New York • OxfordParis • San Diego • San Francisco • Singapore • Sydney • TokyoFont: Times & Century gothic Size:10/12pt Margins:Top:18mm Gutter:18mm T.Area:125mm 192mm 1 Color Lines: 46 Fresh RectoEls AMS CSHN Prelims 11-3-2008 20:53 Page:3 Trim: 165mm240mm Floats: Top/Bottom TS: Integra, India0102030405060708091011121314151617181920212223242526272829303132333435363738394041424344454647ElsevierRadarweg 29, PO Box 211, 1000 AE Amsterdam, The NetherlandsLinacre House, Jordan Hill, Oxford OX2 8DP, UKFirst edition 2008Copyright  2008 Elsevier B.V. All rights reservedNo part of this publication may be reproduced, stored in a retrieval systemor transmitted in any form or by any means electronic, mechanical, photocopying,recording or otherwise without the prior written permission of the publisherPermissions may be sought directly from Elsevier’s Science & Technology RightsDepartment in Oxford, UK: phone (þ44) (0) 1865 843830; fax (þ44) (0) 1865 853333;email: permissions@elsevier.com. Alternatively you can submit your request online byvisiting the Elsevier web site at http://elsevier.com/locate/permissions, and selectingObtaining permission to use Elsevier materialNoticeNo responsibility is assumed by the publisher for any injury and/or damage to personsor property as a matter of products liability, negligence or otherwise, or from any useor operation of any methods, products, instructions or ideas contained in the materialherein. Because of rapid advances in the medical sciences, in particular, independentverification of diagnoses and drug dosages should be madeLibrary of Congress Cataloging-in-Publication DataA catalog record for this book is available from the Library of CongressBritish Library Cataloguing in Publication DataA catalogue record for this book is available from the British LibraryISBN: 978-0-444-53099-8For information on all Elsevier publicationsvisit our website at books.elsevier.comPrinted and bound in Hungary08 09 10 11 12 10 9 8 7 6 5 4 3 2 1Working together to grow libraries in developing countrieswww.elsevier.com  |  www.bookaid.org  |  www.sabre.orgFont: Times & Century gothic Size:10/12pt Margins:Top:18mm Gutter:18mm T.Area:125mm 192mm 1 Color Lines: 46 Fresh RectoEls AMS CSHN Prelims 11-3-2008 20:53 Page:4 Trim: 165mm240mm Floats: Top/Bottom TS: Integra, India0102030405060708091011121314151617181920212223242526272829303132333435363738394041424344454647To the older trees, because that’s from them that we came from but most importantly, tothe young trees, because to them belongs the future.In my naı¨ve mind I like to think of knowledge dissemination as an old tree, with its rootsstrongly and deeply set in the ground, and with its seeds gently taken by a lovely windthat spreads them all around. Let the ground stick close to the old tree’s roots and let thewind caress its branches, as long as possible . . . till new young trees grow up from theground and become stronger and stronger and can finally replace the old one.Font: Times & Century gothic Size:10/12pt Margins:Top:18mm Gutter:18mm T.Area:125mm 192mm 1 Color Lines: 46 Fresh RectoEls AMS CSHN Prelims 11-3-2008 20:53 Page:5 Trim: 165mm240mm Floats: Top/Bottom TS: Integra, India0102030405060708091011121314151617181920212223242526272829303132333435363738394041424344454647Font: Times & Century gothic Size:10/12pt Margins:Top:18mm Gutter:18mm T.Area:125mm 192mm 1 Color Lines: 46 Fresh RectoEls AMS CSHN Prelims 11-3-2008 20:53 Page:6 Trim: 165mm240mm Floats: Top/Bottom TS: Integra, India0102030405060708091011121314151617181920212223242526272829303132333435363738394041424344454647Table of ContentsPreface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ixChapter 1: Introduction: the interdisciplinary nature of nanotechnologyand its need to exploit frontier characterization techniquesCarlo Lamberti . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1Chapter 2: Ab initio studies of structural and electronic propertiesMaria Peressi, Alfonso Baldereschi, and Stefano Baroni . . . . . . . . . . . . . . . . . . . . . . . . 17Chapter 3: Electrical characterization of nanostructuresAnna Cavallini and Laura Polenta . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55Chapter 4: Strain and composition determination in semiconductingheterostructures by high-resolution X-ray diffractionClaudio Ferrari and Claudio Bocchi . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93Chapter 5: Transmission electron microscopy techniques for imagingand compositional evaluation in semiconductor heterostructuresLaura Lazzarini, Lucia Nasi, and Vincenzo Grillo . . . . . . . . . . . . . . . . . . . . . . . . . . . . .133Chapter 6: Accessing structural and electronic properties of semiconductornanostructures via photoluminescenceStefano Sanguinetti, Mario Guzzi, and Massimo Gurioli . . . . . . . . . . . . . . . . . . . . . . . .175Chapter 7: Power-dependent cathodoluminescence in III-nitridesheterostructures: from internal field screening to controlled band-gap modulationGiancarlo Salviati, Francesca Rossi, Nicola Armani, Vincenzo Grilloand Laura Lazzarini . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .209Chapter 8: Raman spectroscopyDaniel Wolverson . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .249Chapter 9: X-ray absorption fine structure in the study of semiconductorheterostructures and nanostructuresFederico Boscherini . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .289Chapter 10: Nanostructures in the light of synchrotron radiation:surface-sensitive X-ray techniques and anomalous scatteringTill Metzger, Vincent Favre-Nicolin, Gilles Renaud, Hubert Renevier,and Tobias Schu¨lli . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .331Font: Times & Century gothic Size:10/12pt Margins:Top:18mm Gutter:18mm T.Area:125mm 192mm 1 Color Lines: 46 Fresh RectoEls AMS CSHN Prelims 11-3-2008 20:53 Page:7 Trim: 165mm240mm Floats: Top/Bottom TS: Integra, Indiavii0102030405060708091011121314151617181920212223242526272829303132333435363738394041424344454647Chapter 11: Grazing incidence diffraction anomalous fine structurein the study of structural properties of nanostructuresMaria Grazia Proietti, Johann Coraux, and Hubert Renevier . . . . . . . . . . . . . . . . . . . .371Chapter 12: The role of photoemission spectroscopies in heterojunction researchGiorgio Margaritondo . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .407Chapter 13: ESR of interfaces and nanolayers in semiconductor heterostructuresAndre Stesmans and V.V. Afanas’ev . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .435Subject Index. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .483Font: Times & Century gothic Size:10/12pt Margins:Top:18mm Gutter:18mm T.Area:125mm 192mm 1 Color Lines: 46 Fresh RectoEls AMS CSHN Prelims 11-3-2008 20:53 Page:8 Trim: 165mm240mm Floats: Top/Bottom TS: Integra, Indiaviii Table of Contents0102030405060708091011121314151617181920212223242526272829303132333435363738394041424344454647PrefaceAfter the publication of the review “C. Lamberti, The use of synchrotron radiation techniquesin the characterization of strained semiconductor heterostructures and thin films, Surf. Sci.Rep., 53 (2004) 1–197”, Elsevier contacted me for the coordination of a new book collectingthe most used characterization techniques for the investigation of semiconductor heterostruc-tures and nanostructures. After an initial inertia from my part, I accepted the task. Theimmediate enthusiastic replay of most of the contacted chapter coordinators has made mywork easier than expected. I would like to express my gratitude to all these colleagues, as wellas to all colleagues who have kindly acted as competent reviewers, as their hard work hasimportantly helped the chapter coordinators and myself to improve the quality of the finalproduct. At the end of the task, looking to the final result, I am proud to count within thechapter coordinators dear friends and eminent scientists that are in the top positions in theranking lists of the corresponding disciplines. I am even more proud to underline that, amongsuch list of eminent scientists, women play an important role, leading four chapters.“Characterization of Semiconductor Heterostructures and Nanostructures” is structured inchapters, each one devoted to a specific characterization technique used in the understandingof the properties (structural, physical, chemical, electrical, etc.) of semiconductor quantumwells and superlattices. A chapter is devoted to the ab initio modeling. The book has basicallya double aim. The first one lies on the educational ground. The book provides the basicconcept of each of the selected techniques with an approach understandable by master andPh.D. students in Physics, Chemistry, Material Science, Engineering, and Nanotechnology.The second aim is to provide a selected set of examples from the recent literature of the TOPresults obtained with the specific technique in understanding the properties of semiconductorheterostructures and nanostructures. Each chapter has consequently this double structure: afirst part devoted to explain the basic concepts, serving the largest possible audience, and asecond one to the discussion of the most peculiar and innovative examples, allowing the bookto have the longest possible shelf life. So students should not get frustrated if they find moredifficulties in the understanding of the second part of the chapters. My advice is to focus onthe first parts; they can always came back to the second parts in the ensuing years, when theirexperience will be improved. Of course, the book is devoted also to the specialized commu-nity of scientists working in the fields of design, growth, characterization, and testing ofheterostructures-based devices in both academic and industrial laboratories. Such readersshould skip the first parts of the chapters, focusing on the final ones.On top of this, the book has a further and somewhat even more ambitious goal. In thisregard, the topic of quantum wells, wires, and dots should be seen as a pretext of applying toplevel characterization techniques in understanding the structural, electronic, etc. properties ofmatter at the nanometer (even sub-nanometer) scale. In this way, it is aimed to become areference book in the much broader, and extremely hot, field of Nanotechnology.Font: Times & Century gothic Size:10/12pt Margins:Top:18mm Gutter:18mm T.Area:125mm 192mm 1 Color Lines: 46 Fresh RectoEls AMS CSHN Prelims 11-3-2008 20:48 Page:9 Trim: 165mm240mm Floats: Top/Bottom TS: Integra, Indiaix0102030405060708091011121314151617181920212223242526272829303132333435363738394041424344454647Font: Times & Century gothic Size:10/12pt Margins:Top:18mm Gutter:18mm T.Area:125mm 192mm 1 Color Lines: 46 Fresh RectoEls AMS CSHN Prelims 11-3-2008 20:48 Page:10 Trim: 165mm240mm Floats: Top/Bottom TS: Integra, India

Characterization of Semiconductor Heterostructures and Nanostructures

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Characterization of Semiconductor Heterostructures and Nanostructures

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